Abstract
The fabrication of CMOS devices in SiC is important for both a higher operating temperature capability and the integration with SiC power devices. In this work, n-channel and p-channel signal MOSFETs have been successfully fabricated using a process technology fully compatible with our HV SiC VDMOS technology. A preliminary SiC CMOS inverter has been also integrated. The gate oxide configuration includes the use of Boron to improve SiO2/SiC. Electrical characterizations have been carried out at room temperature and a summary of the results is presented. The biggest challenge is to balance the n-type and p-type MOSFETs not only in area but also in Vth value.
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