Abstract
This work reports a complementary metal-SU8-graphene (MSG) method for constructing integrated graphene nanocircuits with excellent air and temperature stability. In this approach, electron beam (e-beam) lithography was first used to selectively pattern micro/nanoscale meshes on pristine graphene to form p-type regions. Then SU-8 thin films were spun and e-beam patterned to convert the target region of p-type graphene into n-type. The SU-8 was utilised as a doping source and an encapsulating layer for n-type graphene. To demonstrate the proposed MSG method, a graphene-based voltage inverter is constructed by complementary doping p- and n-type field effect transistors on a single graphene sheet. The electronic and thermal characteristics of the fabricated device were also studied.
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