Abstract
Integration of 16 ×16 and 32 ×32 extended-gate ion-sensitive field-effect transistor (ISFET) arrays with a low-power consumption read-out circuitry has been reported. Si3N4 film used as a pH sensitive layer is deposited on the 4 ×4 µm2 extended-gate electrodes of ISFETs in the integrated circuit by catalytic chemical vapor deposition (Cat-CVD). The average pH sensitivity is 41 mV/pH, and the distribution obeys a Gaussian distribution with a standard deviation of 1.5–3.4 mV. The result is compared with that of pH sensitivity measurement using an Al2O3 layer formed by O2 plasma.
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