Abstract
Complementary field-effect transistor (CFET) is a future transistor type with a high potential to be used beyond 3-nm technology nodes. Despite its high future value, studies related to CFETs mostly focused on the device aspects. In other words, the path of CFET full-chip IC design is not fully demystified, knowing that various design factors/steps (such as schematic, layout, parasitics, design flow) must be considered on top of device traits for full-chip level IC. Therefore, this study focuses on enlightening the remaining factors/steps for full-chip IC design. In detail, we notify the importance of parasitics from various aspects of CFET design and provide optimization solutions. Compared to nanosheet FET (NSFET) on the full-chip scale, CFET shows a reduction of the area by −48.2%, power by −29.4%, total wirelength by −32.5%, and the number of cells by −18.1%.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
