Abstract

The power conversion efficiency (PCE) of metal halide perovskite solar cells (PSCs) has improved dramatically from 3.8% to 25.5% in only a decade. Gas quenching is a desirable method for fabricating high-efficiency cells as it does not consume antisolvents and is compatible with large-area deposition methods such as doctor blading and slot-die coating. To further improve PCEs for gas-quenched PSCs, here, we develop complementary bulk and surface passivation strategies by incorporating potassium iodide (KI) in the perovskite precursor and applying n-hexylammonium bromide (HABr) to the perovskite surface. We show that (1) KI induces a spatial-compositional change, improving grain boundary properties; (2) KI and HABr reduce traps, especially at levels close to the mid-gap; and (3) HABr greatly improves the built-in potential of the device, thereby improving voltage output. The champion device achieves a steady-state PCE of 23.6% with a VOC of 1.23V, which is, to the best of our knowledge, the highest for PSC by gas quenching to date.

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