Abstract
To improve the growth rate and crystal quality of AlN, the competitive growth mechanisms of AlN under different parameters were studied. The mass transport limited mechanism was competed with the gas-phase parasitic reaction and became dominated at low reactor pressure. The mechanism of strain relaxation at the AlN/Si interface was studied by transmission electron microscopy (TEM). Improved deposition rate in the mass-transport-limit region and increased adatom mobility were realized under extremely low reactor pressure.
Highlights
To improve the growth rate and crystal quality of AlN, the competitive growth mechanisms of AlN under different parameters were studied
The low AlN growth rate was due to parasitic processes in the gas phase, which depleted the precursors through particles formation
The growth rate of AlN at normal pressure was limited by severe parasitic reaction
Summary
To improve the growth rate and crystal quality of AlN, the competitive growth mechanisms of AlN under different parameters were studied. The mass transport limited mechanism was competed with the gas-phase parasitic reaction and became dominated at low reactor pressure. To meet the needs of subsequent high quality GaN film growth and related devices fabrication, high quality AlN epitaxial layer is necessary. The gas-phase parasitic reaction in the process of metal organic vapor phase epitaxy (MOVPE), which is a successful method of depositing AlN material, deteriorates the quality of AlN8–10. The reported growth rate of AlN layer on Si by MOVPE is rather low, for instance, 150 nm/h or ,160 nm/h2,12. The effects of the variation of basic epitaxial parameters, including growth pressure, flux of TMAl and NH3, on the growth rate and crystal quality of AlN on Si substrate are studied. The parasitic reaction and atom kinetics are taken into consideration to account for the competitive growth mechanisms
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