Abstract
Thermal evaporation is used to deposit Au/Cu and Cu/Au bilayers on (111) monocrystalline silicon substrates. The layers composition and surface morphology are performed as function of annealing temperature at 200 and 400°C using X-ray diffraction, Rutherford backscattering spectroscopy and scanning electron microscopy. Independently to the sequence of copper and gold deposition, Cu3Si and Cu4Si copper silicides result to the reaction and interdiffusion at the different interfaces. The 1000 and 1200Å thickness of gold and copper diffusion barriers are insufficient to prevent the diffusion of copper and gold atoms respectively, after an annealing of only 200°C. The fitting of concentration profiles of RBS spectra by using the RUMP software revealed a growth of silicides layers not uniform laterally and in depth.
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