Abstract
The photoluminescence properties of InGaN/GaN nanowire arrays were used to probe the adsorption of H2O, O2, NO2 and O3 on III-nitride surfaces. Upon adsorption these gases either enhance (H2O) or quench (O2, NO2, O3) the photoluminescence intensity which allows the related adsorption processes to be evaluated. An analysis of the experimental data in terms of the Langmuir Adsorption and Recombination model reveals that – at room temperature – the Langmuir energy of adsorption Eads increases in the order H2O, O2, NO2, and O3 and that for each gas species Eads increases linearly with increasing surface temperature. We show that this behaviour can be explained by a competition of these air constituents for the same kind of Ga(In) adsorption sites. In contrast, exploratory experiments with H2 and simple hydrocarbons reveal that these reducing species neither quench nor enhance the native photoluminescence response, which indicates that these do not compete for the same adsorption sites as the background air constituents.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
