Abstract
AbstractThe competition between the quantum‐confined Stark effect (QCSE) and the free‐carrier screening effect in AlGaN/GaN multiple quantum wells (MQWs) has been investigated by time‐resolved photoluminescence (PL) measurement. AlGaN/GaN MQWs is a promising material for the next‐generation ultraviolet light‐emitting diodes and laser devices. The large changes in the PL energy and the decay time are observed with changing carrier density. We show that the energy shift and the change in decay time are explained well by the free‐carrier screening effect that compensates for the internal electric field. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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