Competition among recombination pathways in single FAPbBr3 nanocrystals.

Abstract

Single particle level microscopy of immobilized FAPbBr3 nanocrystals (NCs) has elucidated the involvement of different processes in their photoluminescence (PL) intermittency. Four different blinking patterns are observed in the data from more than 100 NCs. The dependence of PL decays on PL intensities brought out in fluorescence lifetime intensity distribution (FLID) plots is rationalized by the interplay of exciton- and trion-mediated recombinations along with hot carrier (HC) trapping. The high intensity-long lifetime component is attributed to neutral exciton recombination, the low intensity-short lifetime component is attributed to trion assisted recombination, and the low intensity-long lifetime component is attributed to hot carrier recombination. Change-point analysis (CPA) of the PL blinking data reveals the involvement of multiple intermediate states. Truncated power law distribution is found to be more appropriate than power law and lognormal distribution for on and off events. Probability distributions of PL trajectories of single NCs are obtained for two different excitation fluences and wavelengths (λex = 400, 440nm). Trapping rate (kT) prevails at higher power densities for both excitation wavelengths. From a careful analysis of the FLID and probability distributions, it is concluded that there is competition between the HC and trion assisted blinking pathways and that the contribution of these mechanisms varies with excitation wavelength as well as fluence.