Abstract
Owing to the extraordinary physical and chemical properties, and the potential to couple with nanoplasmonic structures, two-dimensional (2D) transition metal dichalcogenides are promising materials for next-generation (opto-)electronic devices. Targeting the application stage, it is essential to understand the mechanisms of photoluminescence (PL) quenching and enhancement at the nanoscale. In this work, using monolayer MoSe2/hBN heterostructure on Au nanotriangles (NTs) as an example, we report on the local PL quenching and enhancement in the quantum tunneling regime at MoSe2/hBN/plasmonic nanostructure interfaces. By exploiting tip-enhanced photoluminescence spectroscopy, we were able to resolve and image the nanostructures locally. Moreover, by studying the different near-field emission behavior of MoSe2/SiO2, MoSe2/hBN, MoSe2/NT, and MoSe2/hBN/NT, we investigate the localized surface plasmon resonance, electron tunneling, and highly localized strain as the three competing mechanisms of local PL quenching and enhancement in the quantum tunneling regime at the nanoscale.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
