Abstract
The pull-in voltage of a suspended microstructure has been investigated for use as on-chip voltage reference in a compatible MEMS-IC process. Pull-in is detected using capacitive displacement measurement. The stability is affected by an initial parasitic charge build-up and a temperature sensitivity of −149 μV/K. A burn-in procedure is required to minimize the first effect. The temperature coefficient is compensated for by applying additional temperature dependent electrostatic energy to the microstructure. Devices fabricated in an epi-poly process and designed for a nominal pull-in voltage at 5 V have a measured value at 4.7424 V. Drift becomes negligible after 120 h of operation. The temperature reproducibility is within the resolution of the readout at 100 μV over a temperature range between 20 and 60 °C.
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