Abstract
AbstractHall‐effect measurements on single crystal boron‐doped CVD diamond in the temperature interval 80–450 K are presented together with SIMS measurements of the dopant concentration. Capacitance–voltage measurements on rectifying Schottky junctions manufactured on the boron‐doped structures are also presented in this context. Evaluation of the compensating donor (ND) and acceptor concentrations (NA) show that in certain samples very low compensation ratios (ND/NA below 10–4) have been achieved. The influence of compensating donors on majority carrier transport and the significance for diamond device performance are briefly discussed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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