Compensation for the Nonlinearity of the Drain–Gate I–V Characteristic in Field-Effect Transistors with a Gate Length of ~100 nm

E A Tarasova,S V Khazanova,N N Grigoryeva,O L Golikov,S V Obolensky,A B Ivanov,A S Puzanov

doi:10.1134/s1063782620090274

Compensation for the Nonlinearity of the Drain–Gate I–V Characteristic in Field-Effect Transistors with a Gate Length of ~100 nm

E A Tarasova, S V Khazanova + Show 5 more

https://doi.org/10.1134/s1063782620090274

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Journal: Semiconductors	Publication Date: Sep 1, 2020
Citations: 4

Affiliation: N. I. Lobachevsky State University of Nizhny Novgorod

#Characteristics In Field-effect Transistors #Two-dimensional Electron Gas Field-effect Transistors + Show 8 more

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Abstract

The nonlinearity of the gate–drain current–voltage characteristics in classical Schottky transistors and two-dimensional electron gas field-effect transistors based on AlGaAs/InGaAs/GaAs and InGaAs/GaAs compounds is analyzed. The carrier velocity-overshoot effect in the transistor channel is analyzed for various doping profiles of the structures under study.

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