Abstract
A CuInSe2 absorption layer was fabricated by electrochemical deposition followed by selenization at elevated temperature to adjust the chemical composition and crystallization. However, because many surface cracks formed on the absorption layer during selenization at elevated temperature, presumably caused by the thermal stress mismatch between the CuInSe2 absorption layer and the Mo conducting layer, the light-absorption performance of the CuInSe2 layer was degraded. To mitigate the cracking problem, we electrochemically deposited another thin layer of CuInSe2 film onto the initially deposited CuInSe2 layer without any further processing. We observed that the specimens with the second layer of film presented higher light-absorption ability that depended on the thickness of the second layer, which was at least about 200 nm, and an optical bandgap that was about 10% wider than that of the initially deposited films.
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