Compensation effects on hole transport in C-doped p-type GaPN dilute nitrides

Yongjie Zou,Stephen M Goodnick

doi:10.1063/5.0043001

Abstract

Experimental studies of transport in GaPN dilute nitrides have evidenced low hole mobilities, which limit their applications in optoelectronics. Theoretical work to date has not explained the origin of such low hole mobilities. Here, we use full band cellular Monte Carlo methods to investigate hole transport in C-doped GaPN dilute nitrides as a function of hole concentration. Good agreement between simulation and experiment is obtained by introducing a doping-dependent self-compensation. The results suggest that the reduction in the hole mobility is caused by the compensation for the p-type C doping, which is likely due to the formation of C–N complexes that act as donor scattering centers. This agrees well with the low C activation ratio reported by Liu et al. [Appl. Phys. Lett. 96, 032106 (2010)] and other studies on C–N complexes in GaP.

Highlights

The scattering mechanisms used in the simulation include polar optical phonon scattering, deformation potential scattering, piezoelectric scattering, ionized impurity scattering, alloy scattering, and neutral impurity scattering, of which the last two may be important for dilute nitrides in general
We compare to the mobility data in Ref. 16 using the full band cellular Monte Carlo (CMC)19,20 simulation of the low field mobility to better understand the origin of the lower hole mobilities of p-type GaPN dilute nitrides compared to those of GaP
The results of the present work suggest that, as discussed later, ionized impurity scattering is critical in explaining the low hole mobility in C-doped GaPN dilute nitrides

Summary

Introduction

The scattering mechanisms used in the simulation include polar optical phonon scattering, deformation potential scattering, piezoelectric scattering, ionized impurity scattering, alloy scattering, and neutral impurity scattering, of which the last two may be important for dilute nitrides in general. We compare to the mobility data in Ref. 16 using the full band cellular Monte Carlo (CMC)19,20 simulation of the low field mobility to better understand the origin of the lower hole mobilities of p-type GaPN dilute nitrides compared to those of GaP.

Results

Conclusion