Abstract
Investigations have been made of the compensation effect of lattice constant on LPE grown silicon layer by the simultaneous doping of tin and phosphorus. The difference in the effective lattice constants between the epitaxial layers and the substrates is measured by an X-ray double-crystal spectrometer using asymmetric Bragg reflection. It is possible to eliminate the difference by proper doping of tin, and highly doped layer can be grown on the high resistive substrate under lattice matching condition.
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