Abstract
A multilevel model was developed to calculate the position of the Fermi level in GaAs. All the electrically-active impurity concentrations, indicated by spark source mass spectrographic analysis, were taken into account in the computation. The deduced semiconducting or semi-insulating properties are in agreement with the measured characteristics of the investigated crystals. It is shown that, in the case of the large gap semiconductors, only deep-lying impurity compensation results in high resistivity, semi-insulating materials.
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