Abstract
Ternary semiconductor Zn0.7Cd0.3Se nanowires are synthesized using Se atmosphere compensating technique. The structure characterizations reveal that the as-synthesized nanowires are single-crystalline with zinc blende structure and a crystal growth direction of [1]. The electron transport characteristics based on nanowire nano-field-effect transistors demonstrate that the Zn0.7Cd0.3Se nanowires have p-type conductivity with a mobility (μh) of 12.8cm2V−1S−1 and carrier concentration (nh) about 1.0×1017cm−3. The prepared nanowires with significant p-type conductivity will be a promising candidate for nanoelectronic devices.
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