Abstract
Electrical compensation inadvertently obtained with the introduction of dopant ions by implantation has been examined in InP. Intermediate mass sulfur and silicon ions implanted at 1 MeV are found to compensate InP at a removal rate ≈ 50 carriers per ion. Comparable rates to RT are again obtained on irradiating at 200 °C, indicating that the defect responsible for compensation differs from and is more stable than the general lattice disorder observed by backscattering. Its persistence also explains why elevated temperature implants are not active without further annealing. Annealing of the compensated layers at temperatures to 600 °C reveals two recovery stages and the presence of two distinct compensating defects as is the case in GaAs.
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