Abstract
The compensating acceptors and donors in nitrogen δ-doped ZnSe epilayers grown by molecular beam epitaxy using a nitrogen rf-plasma source are studied by means of photoluminescence (PL) and photoluminescence excitation spectroscopy (PLE). The temperature dependence of PL and PLE spectra obtained from the nitrogen δ-doped layers is investigated in detail, and a deep acceptor and a deep donor with ionization energies of ∼170 and ∼88 meV are reported for the nitrogen δ-doped layers. These two deep centers are assigned to N clusters, i.e., NSe-Zn-NSe for the deep acceptor and NSe-NZn for the deep donor.
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