Abstract
Preventing stray magnetic interactions is important to improving technology that relies upon manipulating an electron's charge and spin. To this end, the authors investigate a binary intermetallic that has an internal magnetic field, yet does not affect the spin of surrounding components. As-grown epitaxial thin films of Mn${}_{3}$Al on GaAs(001) present the the ideal D0${}_{3}$ Heusler phase. This compound should be quite interesting for optimizing tomorrow's spintronic devices.
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