Abstract
We investigate the electroabsorption properties of an InGaAs-InAlAs superlattice optical waveguide. When reverse biased, the structure exhibits large extinction ratios over short waveguide lengths with very low drive voltages by using low-energy oblique transitions below the superlattice band gap. Although the structure has been optimized for modulation, laser emission is observed under forward bias. The peak emission wavelength stands in the ‘‘blue-shift’’ region which opens a way to straightforward laser-modulator monolithic integration.
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