Compatibility and optoelectronic of ZnSe nano crystalline thin film

Abstract

We report the room temperature synthesis of zinc selenide (ZnSe) nano crystalline thin film on quartz by using a relatively simple and low cost closed space sublimation process (CSSP). The compatibility of the prepared thin films for optoelectronic applications was assessed by X-ray diffraction (XRD), atomic force microscope (AFM), scanning electron microscope (SEM), Raman spectroscopy, photoluminescence, and Fourier transform infrared spectroscopy (FT-IR). The XRD confirmed that the films were polycrystalline with the preferential orientation along the (111) plane corresponding to the cubic phase (2θ = 27.28°). The AFM indicated that the ZnSe film presented a smooth and compact morphology with RMS roughness 19.86 nm. The longitudinal optical phonon modes were observed at 247 cm−1 and 490 cm−1 attributed to the cubic structured ZnSe. The Zn—Se stretching band was confirmed by the FT-IR. The microstructure and compositional analysis was made with the SEM. The grain size, dislocation density, and strain calculated were co-related. All these properties manifested a good quality, high stability, finely adhesive, and closely packed structured ZnSe thin film for optoelectronic applications.