Abstract
Compared to Si IGBT, SiC MOSFET are characterized by faster switching speed and higher operating junction temperature. Potential advantages including significantly lower switching loss, lower dead time and higher switching frequency are achieved by SiC devices. For the 1kW PMSM drive prototype specification, the power losses of Si IGBTs and SiC MOSFETs are compared. Dead-time effect is analyzed and the simulation results are given. 1kW PMSM drive prototypes based on Si and SiC power devices are fabricated respectively, and experimental results including power loss, efficiency, temperature rise and dead time effect under low speed are given, which verify that the PMSM drive based on SiC MOSFET achieves higher efficiency, higher power density and better dynamic performance.
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