Comparisons of InP/InGaAlAs and InAlAs/InGaAlAs distributed Bragg reflectors grown by metalorganic chemical vapor deposition

Abstract

Long wavelength vertical cavity surface emitting lasers (VCSELs) are considered the best candidates for the low cost reliable light emitters in fiber communications. The low refractive index contrast in the conventional InP-based lattice-matched distributed Bragg reflectors (DBRs), InP/InGaAsP, impeded the development of 1.3–1.5 μm VCSELs. However, the monolithic InP-based lattice-matched DBRs are still most attractive and desirable. The InP/InGaAlAs and InAlAs/InGaAlAs DBRs with larger refractive index contrast than the conventional InP/InGaAsP DBRs have been demonstrated recently. In this report, we compare these two material systems in terms of optical and electrical properties of DBRs. We found the InP/InGaAlAs DBRs have better electrical and optical properties, while the InAlAs/InGaAlAs DBRs have much lower growth complexity.