Comparisons of 6.5kV 25A Si IGBT and 10-kV SiC MOSFET in Solid-State Transformer application

Abstract

A 6.5 kV 25 A dual IGBT module is customized and packaged specially for high voltage low current application like solid state transformer and its characteristics and losses have been tested under the low current operation and compared with 10 kV SiC MOSFET. Based on the test results, the switching losses under different frequencies in a 20 kVA Solid-State Transformer (SST) has been calculated for both devices. The result shows 10 kV SiC MOSFET has 7-10 times higher switching frequency capability than 6.5 kV Si IGBT in the SST application.