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Abstract
Cu-doped InP (Cu:InP) and InP/ZnSe nanocrystals (NCs) with near-infrared-I (NIR-I) emission were prepared and characterized. Femtosecond transient absorption spectra revealed that the epitaxial growth of a ZnSe diffusion barrier onto the Cu:InP core can amplify its exciton-dopant coupling strength, with the energy transfer times of $\sim{220}\;{\rm ps}$∼220ps for Cu:InP NCs and $\sim{183}\;{\rm ps}$∼183ps for Cu:InP/ZnSe NCs. Importantly, the Cu:InP/ZnSe NCs exhibit much larger two- and three-photon absorption cross sections, reaching $\sim{10162}$∼10162 GM at 1030 nm and $\sim{1.06} \times {{10}^{ - 77}}\;{{\rm cm}^6}\,{{\rm s}^2}\,{{\rm photon}^{ - 2}}$∼1.06×10-77cm6s2photon-2 at 1600 nm, compared with Cu:InP NCs.
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