Comparison on the Electrical, Structural and Optical Properties of CuI Thin Films Deposited by Spin Coating and by Atomization Method

Abstract

In this study, a novel approach of using two different methods was investigated to prepare the CuI thin films. The CuI thin films in this research were prepared by spin coating method and by mister atomizer. Both methods used CuI powder as a precursor and acetonitrile as a solvent. The thickness of CuI films in this research range from nm – um thickness depending on the deposition technique. The 2 point probe I-V measurement was used to measure the electrical properties. The resistivity of about 106 Ω cm-101 Ω cm was observed with CuI thin films using spin coating technique. Then, the surface morphology shows all the films exhibit a microsturucture CuI particles in a case of mister atomizer method. For optical measurement, the ultraviolet-visible- near infrared (UV-VIS-NIR) measurement (Perkin Elmer Lambda 750) was used. The optical band gap of about ±3.1 eV and ±2.9 eV were observed in those CuI films. These properties of different technique are applicable for application in electronic devices such as in solar cells.