Abstract
A single memory cell having both volatile memory (VM) and nonvolatile memory (NVM) functions with an independent asymmetric dual-gate structure is reported, as well as its programming methods. In the case of operating the device as a VM cell, a higher sensing margin is obtained, and an undesirable soft-programming issue is suppressed when a gate-induced drain leakage programming method is used. Additionally, the sensing margin and hold retention time of the VM operation are improved in a programmed state of the NVM function. These results indicate that the proposed device has potential for high-density embedded-memory applications.
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