Abstract
LaAlO3 crystals were implanted by C ions and O ions at an energy of 6.0MeV with a fluence of 1.5×1015 ions/cm2. The profiles of the guided modes were measured through prism coupling and end-face coupling methods with a 633nm laser source. A nonleaky waveguide structure in the TM mode was fabricated by O ion implantation after a proper annealing treatment. Characteristics of the implanted C and O ions were compared. Some changes of the full width at half of the maximum and intensity of the Raman spectra were observed between the waveguide and substrate regions in LaAlO3 crystals. Thus, the Raman spectra can be used to visualize any damage or defects in the LaAlO3 crystals during the implantation process.
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