Abstract
CdTe and (Cd,Zn)Te crystals were grown to study the compensation mechanism and the influence on the transport properties. Undoped and doped crystals with Sn, In, and Ge were grown. The crystals showed resistivities up to 10/sup 9/ /spl Omega/cm and higher. The transport properties depended strongly on the dopant and the compensation mechanism. For the doping with a deep donor, the mobility-lifetime product of electrons were 2/spl times/10/sup -5/ cm/V and 4/spl times/10/sup -4/ mcm/sup 2//V for Ge and Sn doped, respectively. The highest values were obtained for In doped (Cd,Zn)Te with 3.3/spl times/10/sup -3/ cm/sup 2//V.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
