Abstract
CdTe and (Cd,Zn)Te crystals were grown to study the compensation mechanism and the influence on the transport properties. Undoped and doped crystals with Sn, In, and Ge were grown. The crystals showed resistivities up to 10/sup 9/ /spl Omega/cm and higher. The transport properties depended strongly on the dopant and the compensation mechanism. For the doping with a deep donor, the mobility-lifetime product of electrons were 2/spl times/10/sup -5/ cm/V and 4/spl times/10/sup -4/ mcm/sup 2//V for Ge and Sn doped, respectively. The highest values were obtained for In doped (Cd,Zn)Te with 3.3/spl times/10/sup -3/ cm/sup 2//V.
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