Abstract
This report reviews the feasibility of two-dimensional hydrodynamic models in bulk SiC and ZnO semiconductor materials. Although the single-gas hydrodynamic model is superior to the drift-diffusion or energy balance model, it is desirable to direct the efforts of future research in the direction of multi-valley hydrodynamic models. The hydrodynamic model is able to describe inertia effects which play an increasing role in different fields of micro and optoelectronics where simplified charge transport models like the drift-diffusion model and the energy balance model are no longer applicable. Results of extensive numerical simulations are shown for SiC and ZnO materials, which are in fair agreement with other theoretical or experimental methods.
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