Abstract
Selective emitter solar cells can provide a significant increase in conversion efficiency. However most approaches still needs many technological steps and alignment procedures. This paper reports on the comparison of two laser processes for selective emitter. In both cases, the phosphorous glass (PSG) present after the thermal Pdiffusion acts as a dopant source for the laser process. In the first process, the laser-assisted diffusion takes place directly after the thermal diffusion. In the second process, the PSG layer is preserved and covered by silicon nitride. The laser is used to open locally the antireflection and passivation coating, and at the same time, achieve local phosphorus diffusion. This second process is potentially self-aligned if electrochemical front side metallization are used. Numerical simulation of the laser-matter interaction for the two structures is discussed. Preliminary solar cells results for both processes are compared. In particular, illuminated I-V measurements and spectral response measurements are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
