Comparison of TOF-ERDA and nuclear resonance reaction techniques for range profile measurements of keV energy implants

Abstract

A comparative study on the range measurements of keV energy implants by the Time-of-Flight Elastic Recoil Detection Analysis (TOF-ERDA) and conventionally used nuclear resonance reaction methods has been performed for 20–100 keV 15N + ions implanted into crystalline silicon. Range profiles of 15N atoms were chosen because they can be measured accurately using a very strong and narrow resonance at E p = 429.6 keV in the reaction 15N(p,αγ) 12C which provides a challenging test for other methods. The measured range profiles were simulated by molecular dynamics calculations where the interatomic NSi pair potential is deduced from first principles calculations. The electronic stopping power for 20–100 keV nitrogen ions in silicon is deduced from the comparison of the measured and simulated range profiles. The results are discussed in the framework of the applicability of the TOF-ERDA technique for keV energy ion range measurements.