Abstract
AbstractSingle quantum wells of low InN concentration InGaN grown on high quality nonpolar and semipolar substrates cut from bulk GaN boules are studied by time‐resolved photoluminescence techniques. Data is presented for different well widths at varying pump fluence and sample temperature to study nonlinear non‐radiative recombination, radiative lifetimes, and carrier localization or separation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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