Abstract
AbstractSimple analytical kinetic model of single‐layer crystal–mother‐phase interface is proposed, which provides results that can be compared directly with thermodynamic Jackson model. Both models are based on zeroth order approximation known from lattice‐gas models, in which solid and fluid growth units are treated as mixed randomly in the interface layer. It is shown that the kinetic and thermodynamic approaches can lead to very similar predictions about growth mechanism. The parameters characterising growth conditions, obtained from these models, are significantly different from those obtained from Monte Carlo simulations applied to study stable states of single‐layer interface. Monte Carlo calculations describe crystal growth in detail and their results can predict characteristic parameters for real experiment. Observed differences seem to be strongly influenced by the use of zeroth order approximation. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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