Abstract
The synthesis conditions of SiC ultrafine particles from SiH 4 and C 2H 4 using a CO 2 laser were studied and a comparison was made between SiH 4C 2H 4 and SiH 2Cl 2C 2H 4 systems. Ultrafine SiC particles were synthesized by irradiating a SiH 4 and C 2H 4 gas mixture with a CO 2 laser at atmospheric pressure. SiC particles were obtained at a laser power of more than 0·92 kW/cm 2. The behavior of the reaction flame temperature and the extent of the laser light absorption by SiH 4C 2H 4 was different from that of SiH 2Cl 2C 2H 4, although an abrupt temperature increase was observed in both cases. In the case of SiH 4C 2H 4 an abrupt increase in the laser light absorption was not observed, whilst it was observed in the case of SiH 2Cl 2C 2H 4. This difference resulted from the difference in liability to form solid carbon particles.
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