Comparison of the sensitivity to heavy ions of 0.25 μm bulk and SOI technologies

G Gasiot,P Roche,J Du Port De Poncharra,O Musseau,V Ferlet-Cavrois,P Flatresse,C D'Hose

doi:10.1109/radecs.2001.1159282

Comparison of the sensitivity to heavy ions of 0.25 μm bulk and SOI technologies

G Gasiot, P Roche + Show 5 more

https://doi.org/10.1109/radecs.2001.1159282

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Publication Date: Sep 10, 2001

Citations: 3

Affiliation: STMicroelectronics (France), STMicroelectronics (India), Atomic Energy and Alternative Energies Commission, CEA DAM Île-de-France, CEA Grenoble, Direction de la Recherche Technologique

#SOI Technologies #Bulk Technologies + Show 8 more

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Abstract

The sensitivity to heavy ions of non-hardened 0.25 /spl mu/m Partially Depleted (PD) SOI and bulk technologies is studied with experiments, device and circuit simulations. Comparable threshold LET are found for both technologies. Nevertheless, SOI saturated cross section is much lower than bulk one. For non-hardened technologies, SOI is then less sensitive than bulk to heavy ions.

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