Abstract
Simulation of flux-peaking effect of the 255 MeV positrons channeled in (220) Si crystals is performed in the frame of classical and quantum mechanics. Comparison of the results obtained using both approaches shows relatively good agreement.
Highlights
The flux-peaking effect (FPE) is one of the known orientation effects at channeling of positively charged particles
Results of simulation The spatial distribution of the 255 MeV positrons channeled in a 5 μm thick Si crystal along (220) planes are shown in figure 2 obtained using classical approach
Spatial distributions of positrons for incident angle θ=θc/2 are shown in figure 2 (c,d)
Summary
The flux-peaking effect (FPE) is one of the known orientation effects at channeling of positively charged particles. Calculations were performed for 255 MeV positrons channeled along (220) planes in a thin Si crystal. This code computes numerical solutions of the classical equations of relativistic particles using the Doyle-Turner potential for the crystallographic planes [9]. 10 000 trajectories are calculated for different entry points within one period of the planar channeling potential (figure 1(a)).
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