Comparison of the Performance of the Memristor Models in 2D Cellular Nonlinear Network

Aliyu Isah,Stéphane Binczak,Jean-Marie Bilbault,Aurélien Serge Tchakoutio Nguetcho

doi:10.3390/electronics10131577

Aliyu Isah, Stéphane Binczak + Show 2 more

Open Access

https://doi.org/10.3390/electronics10131577

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Abstract

Many charge controlled models of memristor have been proposed for various applications. First, the original linear dopant drift model suffers discontinuities close to the memristor layer boundaries. Then, the nonlinear dopant drift model improves the memristor behavior near these boundaries but lacks physical meaning and fails for some initial conditions. Finally, we present a new model to correct these defects. We compare these three models in specific situations: (1) when a sine input voltage is applied to the memristor, (2) when a constant voltage is applied to it, and (3) how a memristor transfers charges in a circuit point of view involving resistance-capacitance network. In the later case, we show that our model allows for study of the memristor behavior with phase portraits for any initial conditions and without boundary limitations.

Highlights

Resistor, capacitor, and inductor are the three familiar basic passive circuit elements
It is clear that the choice of a window function for a memristor modeling is very important because each function responds dynamically different
Memristor modeling is an important aspect of memristor-based networks

Summary

Introduction

Capacitor, and inductor are the three familiar basic passive circuit elements. Some intriguing features of memristor include memory capability for storage of information, nano-scalability suitable for the modern-day nano-technology, and connection flexibility because it can form series-parallel connections, being able to form stack of memory cells for high density storage applications, nonlinearity, low power consumption, and its ability to replace multiple transistors in a circuit; it will ensure better performances and the most reliable systems. These features, among many others, gave birth to a wide variety of reported memristorbased applications, proposed by adopting numerous models of memristor. The circuit responses are compared using three different models of memristor, including a new one which happens to be suitable in the study of our system dynamics owing to its continuity for any flowing charge through the memristor

Memristor Modeling

Linear and Nonlinear Models Comparison

System Description

Ra ΓCa

Discussion