Abstract
The use of InGaAs/InP for electro-optical intensity modulation is discussed. In mutiple quantum well (MQW) materials the peak excitonic absorption αp, imposes a limit on the maximum change in intensity due to electroabsorption. For InGaAs (100 Å)/InP(100 Å), αp is only 25% of that for GaAs/AlGaAs. This accounts for the observed modulation limit of 1.4 dB/μm, which is significantly lower than the 3.9 dB/μm for GaAs based MQWs. For comparison, we calculated the maximum contrast possible in bulk InGaAs and found it to be 0.7 dB/μm. We conclude that the major benefit of using InGaAs/InP MQWs is associated with their insertion loss and not their contrast ratio.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
