Abstract

Abstract Pd/Al and Pd/Si bilayers were simultaneously ion-beam mixed. These two systems are expected to behave in the same way under ion-beam mixing in view of their rather similar heats of mixing and cohesive energies. In Pd/Al, the square thickness of the mixed layer varies linearly with the irradiation fluence corresponding to a diffusion-controlled process. In Pd/Si, the behavior depends on the ion fluence range. Below a critical value φc, a reaction-controlled process occurred, while above φc a diffusion-controlled behaviour was observed.

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