Abstract
In this work we compare the electrostatic performance of bulk and SOI trigate MOSFETs. To do so, a self-consistent numerical solution of the two-dimensional Schrödinger and Poisson equations has been employed. The threshold voltage of bulk trigates is higher than that of SOI devices, due to the presence of a high-doping substrate, and this difference depends both on the device size and the substrate doping.
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