Abstract
In this work we compare the electrostatic performance of bulk and SOI trigate MOSFETs. To do so, a self-consistent numerical solution of the two-dimensional Schrödinger and Poisson equations has been employed. The threshold voltage of bulk trigates is higher than that of SOI devices, due to the presence of a high-doping substrate, and this difference depends both on the device size and the substrate doping.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
