Comparison of the electrical and impedance properties of Au/(ZnOMn:PVP)/n-Si (MPS) type Schottky-diodes (SDs) before and after gamma-irradiation

Abstract

The effect of 60Co-iradiation) on the electrical parameters in the Au/(ZnOMn:PVP)/n-Si SDs have been investigated using the current-voltage (I–V) and capacitance/conductance-voltage (C/G–V) measurements. Firstly, the values of reverse-saturation-current (Io), ideality-factor (n), barrier-height (BH), shunt/series resistances (Rsh, Rs), and rectifying-rate (RR) were extracted from the I–V data before and after gamma-irradiation (5 and 60 kGy) using thermionic-emission (TE), Norde, and Cheung methods. The surface-states (Nss) versus energy (Ec–Ess) profile was extracted from I–V data considering voltage-dependent of n and BH using Card-Rhoderick method. Secondly, the doping-donor atoms (Nd), Fermi-energy (EF), BH, maximum electric-field (Em), and depletion-layer width (Wd) were extracted from the linear-part of reverse-bias C−2–V plot for 100 kHz before and after irradiation. Finally, the voltage-dependent profiles of Rs and radiation-induced of Nss were extracted from the C/G–V plots by using Nicollian-Brews and the difference between C–V plots before and after irradiation, respectively. The peak behavior in the Nss–V plots and shifts in its position was attributed to special-distribution of Nss at (ZnOMn:PVP)/n-Si interface and restructure/reordering of them under radiation and electric field. Experimental results show that gamma-irradiation is more effective both on the I–V and C/G–V plots or electrical parameters, and hence the fabricated Au/(ZnOMn:PVP)/n-Si SDs can be used as a radiation-sensor.