Abstract
In this paper, tunneling phenomena of tunneling junctions are studied and analyzed. Tunneling junction is the basic structure of single electric transistor (SET) and other nano devices. Ultra fine oxidized titanium (Ti) lines are formed on the Ti layer, which is 3nm thick and sputtered on a SiO 2 substrate by magnetron sputtering. The atomic force microscope (AFM)'s tip is used as a selective anodization electrode to oxidate the Ti film between electrode structures that are formed by photo lithography. Ti-TiOx-Ti forms metal-insulator-metal (MIM) tunneling junction, and TiOx works as an energy barrier for the electron. Different number of TiOx lines is fabricated between two electrodes by controlling fabrication condition and environment at the same value. And then, the I-V characteristics of tunneling junctions with different number of TiOx lines are measured. The results indicate that the tunneling phenomena of tunneling junctions with different number of TiOx lines are different.
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