Abstract
Bidirectional, or four-quadrant switches (FQS) can be designed as back-to-back MOSFETs connected in common-drain (CD) or common-source (CS) topologies. CD-FQS and CS-FQS assembled from discrete 1.2 kV commercially available SiC Power MOSFETs were characterized to obtain capacitance and switching loss values. The CD-FQS exhibited a 1.6x larger turn-off loss compared to the CD-FQS. The CS-FQS exhibited a lower input capacitance, while the CD-FQS exhibited a lower output and reverse transfer capacitance.
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