Abstract
Thermal and photo-induced annealing was performed on different samples of amorphous silicon. The structural changes were monitored by Raman spectroscopy by means of the frequency shift and change in width of the TO-like phonon band of a-Si. While thermal annealing leads to the expected increase of structural order with temperature, photo-induced annealing shows anomalous behaviour: an increase of disorder with light soaking. This effect is discussed in terms of structural rearrangements of atoms caused by photo-induced electronic transitions.
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