Comparison of strain and damage profiles induced by implantation of Xe +, Ne + and H 2+ ions in yttrium iron garnet

Abstract

Ions of 120 keV Xe +, 100 keV Ne + and 120 keV H + 2 have been implanted to various doses in 2.6 μm epitaxial layers of yttrium iron garnet (Y 3Fe 5O 4) grown on 〈111〉 single crystal gadolinium gallium garnet. Rutherford backscattering and resonant 16O(α, α) 16O scattering of channeled 3.07 MeV 4He + ions have been measured to study crystal distortions induced during room temperature implantation. Strain close to the surface was obtained from the angle change between 〈110〉 and 〈100〉 axes as measured by channeling in implanted and unimplanted parts of the crystal. The damage profile was obtained directly from the energy spectrum of backscattered particles. A simple method to evaluate strain profiles from the measured RBS (Rutherford Backscattering) spectra has been used.